• 专利附录
  • 专利说明
  • 权利要求
  • 类似技术
  • 同族专利
  • 引用文献
  • 法律状态
  • 优先权
    • 专利摘要:

    公开号:NL8900764A
    申请号:NL8900764
    申请日:1989-03-29
    公开日:2001-06-01
    发明作者:
    申请人:Santa Barbara Res Ct；
    IPC主号:
    专利说明:

    Short designation: Epitaxial passivation of Group II - VI infrared photo detectors.
    The invention generally relates to group II - VI infrared (IR) photo detectors, and in particular to a HgOcHte IR photo detector, which has an epitaxially grown passivation layer with a wider forbidden zone, consisting of, for example, OdTe or CdZrïPe, has.
    Msrcuri-cadmiiim-telluride (Hg ^, ^ θ3χΤβ, where x may be substantially equal to zero to 1.0) photo diodes are typically fabricated as two dimensional arrays and include a passivation layer applied to an upper surface of the array , which passivation layer contains low temperature photochemical SiO2, evaporated ZnS, or anodically grown CdS. Although suitable for certain display applications, it has been found that during certain successive arrangement processing steps, such as a high vacuum baking cycle at 100 ° C, which necessitated degassing of a vacuum Dewar vessel, in which vessel the phtho diode array was housed that such a conventional passivation layer can be disadvantageous. For example, a degradation has been observed in critical behavior parameters, such as leakage current, diode impedance, quantum efficiency, noise (especially at low frequencies), spectral response, and optical zone. This deterioration is particularly evident in long-wave detectors. Porosity of the passivation layer and lack of adhesion to the underlying HgOdTe surface are also common problems with the conventional passivation layers described above.
    Furthermore, to the extent that these conventional passivation materials are no more than a coating on the HgCdTe surface, control over the HgCdTe / passivation interface band structure or energy levels is difficult or impossible to perform. It is therefore necessary that these passivation materials both create and maintain flat band conditions at the HgOcEPe / passivation interface if the arrangement is to maintain a desired level of behavioral parameters, especially during and after high temperature processing and storage.
    The aforementioned problems are overcome and other advantages are realized by an IR photo-diode and an arrangement thereof, constructed in accordance with the method and apparatus of the invention, comprising a first radiation absorbing region for generating charge carriers from absorbed radiation, which stealing absorbent region contains a group II-VI grating which has a first type of electrical conductivity, a second region in contact with the first region, the second region containing a group II-VI material which has an electrical conductivity of the opposite type compared to the first region, to form a pn diode times low; and a third region overlaying at least the p-n diode barrier at the interface of the first and second regions, while the third region also contains a Group II-VI material and forms a heterostructure with the underlying material. The first and second regions may have equal or dissimilar energy forbidden zones and the third region has an energy forbidden zone which is wider than either the first or the second region.
    In accordance with a preferred embodiment of the invention, the third region contains an epitaxial passivation layer consisting of OdTe, CdZrïTe or HgOdTe with a wider forbidden zone; wherein the Cd2nTe and the HgOdTe are further adapted in terms of lattice to the semiconductor material of the underlying group II-VI, which material consists of HgOdTe. Optionally, a top layer of glass may be applied to the passivation layer, the top layer of glass complementing the effect of the epitaxial passivation layer to prevent Hg from diffusing outwardly during exposure to high temperature and also to electroplate the diode contacts. isolate from each other.
    These and other aspects of the invention will be made more apparent in the following detailed description of preferred embodiments, which are discussed with reference to the accompanying drawings.
    Fig. 1a is a stylized perspective view, not to scale, of a portion of an arrangement 1 of Group II-VI photo-diodes 2, which in accordance with the invention have an epitaxial passivation layer 5 consisting of Group Π-VI material;
    Fig. 1b is a sectional view of a photo-diode 10 having a HgOdTe radiation absorbing base layer 12, an HgCdTe cap layer 14 and an OdTe, OdZrtTe or HgCdTe passivation layer 16;
    Fig. 2 is a representative energy prohibited zone diagram of the epitaxially passivated photo-diode of FIG. 1b;
    Fig. 3a - 3d are performance charts of an OdTe passivated IMER HgOdTe photo-diode, which shows representative I - V staples at 80K, RqA versus temperature, spectral response, respectively. noise spectrum;
    Fig. 4a-4d show a corresponding set of performance clamps for a prior art SiO passivated rwiR HgCdTe photo-diode
    Fig. 5a and 5b show a comparison of I - V curves for a CdTe passivated resp. a conventional SiO2 passivated MWIR photo diode, both of which are fabricated from different portions of the same HgCdTe slice;
    Fig. 6a-6c show a comparison of the RA product as a function of the storage temperature at 100 ° C for CdTe or conventional Si02 IWIR HgCdTe large area, small area and 5x5 array photo diodes; and
    Fig. 7a and 7b show a comparison of surface recycling rate (SRV) as a function of the baking time at 100 ° C at CdTe passivated resp. conventional Si02 passivated photo diodes.
    Although the invention will be described in the context of a mesa-type photoelectric radiation detector with exposed back, it is to be understood that the insights of the invention also apply to photoconductive radiation detectors with exposed front. The invention is also applicable to any device with a reverse or straight reverse layer. The invention further encompasses planar types of detectors, wherein a base layer has regions, or "pits" of opposite conductivity type, formed within an upper surface thereof; while the interface between the base layer and each region defines the p-n diode reverse layer.
    Referring primarily to Fig. 1a, there is shown a view with stylized elevations of a portion of an array 1 of photo-diodes 2, the view being not to scale. The photo-diodes are formed from a Group II-VI material, such as HgCdTe, each of which is selectively differentiated by the conductivity type to form a plurality of diode turns. The array 1 can be viewed as consisting of a plurality of photo-diodes 2, which are arranged in a regular, two-dimensional array. Incident IR radiation, which can be long wave, medium wave or short wave (DOR, MWIR, SWIR) radiation, is incident on a bottom surface of the arrangement 1 contains a radiation absorbing base layer of Hg. CD too semiconductor
    a
    cover material, where the value of x determines the response of the rank cp either IWIR, MWIR, or SWIR. Each of the photo-diodes 2 is defined by a mesa structure 6, which is typically formed by etching intersecting V-shaped grooves through an overlying cap layer into the base layer. Each of the photodiodes 2 is provided with a zone of contact metallization 4 on a bottom surface thereof, the metallization of which is to electrically couple an underlying photodiode to a reading device (not shown), typically via an indium bump (not shown) addressable auxiliary memory). The top surface of the arrangement 1 is also provided, in accordance with the invention, with a passivation layer 5 consisting of an epitaxial layer of Group II-VI material forming a heterostructure with the underlying Group II-VI material.
    Referring now to Fig. 1b, there is shown in cross-section one of the photo-diodes of the arrangement I, in particular a double layer of HgGd De hetero-reverse photo-diode 10 with a bottom surface for admitting infrared radiation, indicated by the arrow. with h. If desired, photo-diode 10 can be a homo-layer type device. Photo-diode 10 includes a base layer 12 in which the incident radiation is absorbed, thereby generating charge carriers. The radiation absorbing base layer 12 may be either p-type or n-type semiconductor material, and has a cap layer 14, which is of the opposite conductivity type, to form a pn times layer 15. Thus, if the radiation absorbing base layer 12 is p-type HgOdTe, the cap layer 14 is n-type HgCdTe. Charge carriers generated by the absorption of IR radiation result in a current flowing over the reverse layer 15, which flowing current is detected by a readout circuit (not shown) coupled to the photo-diode 10.
    For example, the base layer 12 may be of the p-type and may be doped carbon black arsenic at a concentration of about 5x10 to about.
    16 3 5x10 atmospheres / cm. The cap layer 14 may be intrinsically n-type, or may be made n-type by doping the material 16 1V 3 carbon black indium in a concentration of about 10 to about 10 atomic materials.
    In accordance with a preferred embodiment of the invention, at least the p-n diode turn layer 15 region of the photo diode 10 is passivated with a relatively thin epitaxial layer 16 of cadmium telluride (Cdlte), the passivation layer 16 having a typical thickness of about 5000 AU. has.
    In accordance with another preferred embodiment of the invention, the passivation layer 16 consists of an epitaxial layer of cadmium-zinc telluride (CH2] zyne) which also has a typical thickness of about 5000 A.E. can have.
    In accordance with yet another preferred embodiment of the invention, the passivation layer 16 consists of an epitaxial layer of Hg ... CD Te, the value of x being selected so that the epitaxial layer is a wider forbidden zone then has the underlying base layer and cap layer 12, respectively. 14.
    It can be appreciated that in these preferred embodiments of the invention, the base layer 12 and the cap layer 14 and also the passivation layer 16 are members of the II-VI family of semiconductors, i.e. Hg.j_ χθ3χΤβ and OdTe, respectively. Oi ^ Ziyre. Insofar as the passivation layer 16 is preferably formed by an epitaxial layer growth method, a hetero structure is formed at the interface between the pn reverse layer 15 and the passivation layer 16. That is, the crystalline structure of the passivation layer 16 is substantially continuous with the crystalline structure of the underlying base layer and cap layer and has a wider forbidden zone than the underlying material. This crystalline continuity advantageously provides for a continuous extension of the forbidden zone structure of the HgCdTe layers 12 and 14, which have typical energy forbidden zones from 0.1 to 0.3 eV, to the wider forbidden zone passivation layer 16.
    For example, CdTe has a prohibited zone of approximately 1.6 eV. This results in a bending of the conduction band in an upward direction, driving electrons back from the HgCdTe / CdTe interface. This wider forbidden zone further results in the valence band bending downward, forcing holes out of the interface. This is shown in Figure 2 and will be described in more detail below.
    Referring again to Figure 1b, diode 10 may also include a top layer of glass 18 which may contain any suitable dielectric material such as Si3N4, SiO2 or ZnS. The glass top layer 18 electrically insulates a metallic contact 20 against similar contacts on adjacent diodes. The contact 20 may consist of any suitable material which is effective to form a chemical contact with the HgCdl cap layer 14. Preferably, the metal of the metallic contact 20 does not appreciably diffuse into the cap layer 14. Metals which are suitable palladium and titanium are used to form the contact.
    It has been found that the glass top layer 18 is optional in that the intrinsic resistance of the epitaxial CdTe passivation layer 16 is sufficiently high that side shunting of adjacent photodiodes does not occur within an array of photodiodes. However, it has also been found that the presence of the glass top layer 18 is beneficial in that it serves as an additional barrier to the diffusion of Hg outward from the underlying HgCdTe base layer 12, respectively. cap layer 14. This top glass barrier, in combination with the carbon black diffusion barrier, provided by the contact carbon black itself, should reduce Hg diffusion outwardly so that the resulting photodiode structure can withstand higher temperatures than conventional devices.
    In this regard, it should be noted that the crystalline structure of the epitaxial passivation layer 16, at typical processing and storage temperatures, acts as a primary barrier to the diffusion of Hg out of the HgCdTe layers; the additional barrier provided by the glass top layer 18 and the contact 20 to complement the passivation layer 16 barrier. It should also be noted that insofar as the mechanical properties of the crystalline structure of the passivation layer 16 are superior to conventional passivation coatings, problems associated with porosity and lack of adhesion are overcome.
    Referring now to FIG. 2, there is shown an idealized energy band diagram of the photo-diode 10 of FIG. 1, wherein the broader forbidden zone passivation layer 16 consists of CdTe, and wherein the narrower forbidden zone material, or the HgCdTe base layer 12, is or contains the HgCdTe cap layer 14. As can be seen, a continuously varying potential energy is shown in the conduction band and valentine band so that the conductor band is bent up and the fall band is bent down. This results in the repulsion of electrons as holes from the HgOdTe / CdTe interface. This repulsion of both electrons and holes from the interface, where the relatively high density of lattice dislocations and impurities would otherwise cause excessive surface state generation currents and a reduced life of the charge carriers, results in the photo-diode of the present invention having superior behavior exhibits passivated photo diodes relative to conventional carbon black SiO2.
    Furthermore, if desired, the top surface of the CdTe passivation layer 16 can be doped to isolate charges on the CdTe surface from the HgCdTe surface underneath. In the diagram of Fig. 2, the top surface of the CdTe passivation layer 16 is doped with an n-type impurity. If desired, a p-type impurity can be used instead. A typical dopant concentration of the top surface of the passive. . 17 3 ring layer 16 is about 10 atmospheres / cm.
    For example, the use of Cd ^ ^ ZiyTe as the epitaxial surface passivation material has the additional benefit of lattice matching of the passivation layer and the underlying BgOdTe layer such that dislocations at the HgCdTe / CdZrfTe interface are minimized. For example, y can be selected to have a value of about 0.4. As discussed previously in relation to the OdTe passivated photo diode, the intrinsic resistance of the CdZrfDe passivation makes the glass top layer 18 optional.
    The passivation layer 16 can grow epitaxially to a desired thickness on the photodiode by a vapor phase epitaxy (VFE) method, although a number of other suitable epitaxial layering methods can be used, such as organometallic chemical vapor deposition (MOCVD). In general, any epitaxial growth method can be used which results in the crystalline order of the passivation layer 16 repeating the underlying crystalline order of the HgOdTe. After the layer 16 has grown, the devices can be processed by conventional methods of depositing the glass top layer 18 and contact metallization 20. During the growth of the epitaxial passivation layer 16, a suitable mask may be applied to allow the growth of the epilayer on the prevent the surface area of the cap layer 14 from developing contact metallization. Preferably, the entire surface of the cap layer 14 can cause the passivation layer to grow thereon, the passivation layer being selectively removed from the metalization zone by a subsequent processing step.
    Test structures were fabricated containing 5x5 arrays of photo-diodes, photo-diodes with gated and unported variable zones and MIS capacitors, the photo-diodes containing both LWIR and MWXR HgOdTe radiation absorbing material. Some of the test structures were fabricated with a layer of conventional SiO 2 passivation material, while others were fabricated with an epitaxially grown CdTe passivation layer. Some other test structures were fabricated such that both OdTe and conventional si passivation layer were applied to the same HgCdl slice.
    Fig. 4, 5, 6 and 7 show graphs and performance curves illustrating the performance improvement of the photo-diode devices which according to the invention employ the epitaxial Group II-VI passivation layer 6.
    As previously mentioned, preferred embodiments of the invention are described herein. It is regrettable that those skilled in the art can devise changes to these preferred embodiments based on the foregoing description. While the preferred embodiments of the invention have been penalized in the context of a mesa-type arrangement of photoelectric diodes with exposed backs, it should be recognized that the views of the invention also apply to photo-diodes of the planar type carbon black exposed front, and generally any type of Group II - VI photoelectric or photoconductive device. Thus, it is to be understood that the invention is not limited to only the preferred embodiments as disclosed above, but is instead intended to be limited only as defined by the appended claims.
    权利要求:
    Claims (37)
    [1]
    A photo-diode containing a first radiation absorbing region for generating charge carriers which absorbs radiation, which radiation absorbing region contains a material of Group II - VI which has an electrical conductivity of the first type a second region in contact with the first region, the second region containing a Group II-IV material having an electrical conductivity of the opposite type compared to the first region to form a p-n diode barrier therewith; and a third region overlaying at least the p-n diode barrier, said third region containing an epitaxial layer consisting of a Group II-VI material and wherein the first and second regions have a first and. second energy prohibited zone, and wherein the third region has a third energy prohibited zone which is wider than either of the first or second energy prohibited zones.
    [2]
    Photo-diode according to claim 1, characterized in that the first and second regions consist of HgCdTe and wherein the third region is an epitaxial layer consisting of OdTe.
    [3]
    Photo diode according to claim 1, characterized in that the first and second regions consist of HgCdTe and wherein the third region is an epitaxial layer consisting of CdZrfTe.
    [4]
    Photo diode according to claim 1, characterized in that the first and second regions consist of HgCdTe and wherein the third region is an epitaxial layer consisting of HgCdTe.
    [5]
    A photo-diode according to claim 1, characterized by a fourth region overlying the third region, the fourth region consisting of a dielectric material.
    [6]
    An irradiation responsive photo-diode, comprising: a first radiation absorbing layer having a surface for admitting IR radiation to generate charge carriers from absorbed IR radiation, said radiation absorbing layer containing a Group II-VI material, that has an electrical conductivity of the first type a second layer located at an upper surface of the first layer, said second layer also containing a Group II-VI material which has an electrical conductivity of a type opposite to that of the first layer, thereby forming a p-n diode turn layer; a metallization layer electrically coupled to the second layer for coupling charge carriers to a reader and a passivation layer overlying at least the p-n diode reverse layer, said passivation layer containing a Group II-VI material and forming a heterostructure with the underlying first and second layers; and wherein the first and second layers have a first and. second forbidden energy zone, and wherein the passivation layer has a third forbidden energy zone, which is wider than either of the first or second forbidden energy zones.
    [7]
    Photo-diode according to claim 6, characterized in that the first and second layers consist of HgCdTe and wherein the passivation layer is an epitaxial layer consisting of OdTe.
    [8]
    Photo diode according to claim 6, characterized in that the first and second layers consist of HgOdTe and wherein the passivation layer is an epitaxial layer consisting of OdZnTe.
    [9]
    Photo diode according to claim 6, characterized in that the first and second layers consist of HgCdTe and wherein the passivation layer is an epitaxial layer consisting of HgOdTe with a wider forbidden zone.
    [10]
    Photo-diode according to claim 6, characterized by a third layer, which overlays the passivation layer, which third layer consists of a dielectric material.
    [11]
    11. Arrangement of irradiating photo-diodes containing; a first radiation absorbing layer having a surface suitable for admitting IR radiation to generate charge carriers from absorbed IR radiation, said radiation absorbing layer consisting of a Group II-VI material having an electrical conductivity of the first type; a plurality of mesa regions overlaying an upper surface of the first layer, each of the mesa regions also containing a Group II-VI material which has an electrical conductivity of the type opposite to that of the first layer, in order to define a pn diode barrier at an interface region between each of the mesa regions and the first layer, and a passivation layer, which overlays at least the interface regions, which passivation layer contains a material of Group II-VI, which is active is to form a heterostructure with the interface regions, the first layer and the plurality of mesa regions being a first and. have a second forbidden energy zone, and wherein the passivation layer has a third forbidden energy zone, which is wider than either of the first or second forbidden energy zones.
    [12]
    Arrangement of photo-diodes according to claim 11, characterized in that the first layer and the plurality of mesa regions consist of HgCdTe and wherein the passivation layer is an epitaxial layer consisting of CdTe.
    [13]
    Arrangement of photo-diodes according to claim 11, characterized in that the first layer and the plurality of regions consist of HgCdTe and wherein the passivation layer is an epitaxial layer, which is grid-adapted to the underlying mesa regions si to the first layer.
    [14]
    Arrangement of photo-diodes according to claim 13, characterized in that the epitaxial layer consists of CdZrtlte.
    [15]
    Arrangement of photo-diodes according to claim 13, characterized in that the epitaxial layer consists of HgCdTe, which has a wider forbidden area than the mesa regions or the first layer.
    [16]
    Arrangement of photo-diodes according to claim 11, characterized by a third layer overlaying the passivation layer, which third layer consists of a dielectric material.
    [17]
    Arrangement of IR-reacting photo-diodes, comprising: a base layer with a surface suitable for admitting IR radiation therein, which base layer is effective for absorbing IR radiation for generating charge carriers, which base layer is HgCdTe containing an electrical conductivity of the first type; a plurality of regions formed within a surface of the base layer, each of the regions containing HgCdTe, which has an electrical conductivity of a type opposite to that of the base layer for defining a pn thickness layer at an interface between each of the regions and the base layer; and a passivation layer overlying at least the p-n diode reversal layers, said passivation layer containing a Group II-VI material and forming a heterostructure with the underlying p-n diode turns; wherein the base layer and the plurality of zones are a first forbidden energy zone resp. have a second forbidden energy zone, and the passivation layer has a third forbidden energy zone, which is wider than either of the first or second forbidden energy zones.
    [18]
    Arrangement of photo-diodes according to claim 17, characterized in that the passivation layer is an epitaxial layer consisting of CdTe.
    [19]
    Arrangement of photo-diodes according to claim 17, characterized in that the passivation layer is an epitaxial layer, which is grid-matched to the underlying base layer and to the regions.
    [20]
    Arrangement of photo-diodes according to claim 19, characterized in that the epitaxial layer consists of CdZnTe.
    [21]
    Arrangement of photo-diodes according to claim 19, characterized in that the epitaxial layer consists of HgCdTe.
    [22]
    , 22. Arrangement of photo-diodes according to claim 17, characterized by a glass top layer overlying the passivation layer, said glass top layer consisting of a dielectric material.
    [23]
    Arrangement of photo-diodes according to claim 17, characterized in that an upper surface of the passivation layer is doped in order to give it an electrical conductivity of the desired type.
    [24]
    Arrangement of photo-diodes according to claim 17, characterized in that the first and the second prohibited energy zones are substantially equal to each other.
    [25]
    Arrangement of photo-diodes according to claim 17, characterized in that IR radiation is incident on the top surface of the base layer, the radiation passing through the passivation layer.
    [26]
    The arrangement of photodiodes according to claim 17, characterized in that IR radiation is incident on a bottom surface of the base layer.
    [27]
    27. Method for passivating a Group II-VI photo-diode, characterized in that it is started from a photo-diode, comprising a first zone consisting of Group II-VI material, which has a first type of conductivity and a first forbidden energy zone, and a second region, consisting of a Group II - VI material with a second conductivity type and with a second forbidden energy zone, the second region being in contact with the first region, while the interface between the first and the second region forms a pn diode barrier; and growing an epitaxial layer, consisting of a Group II-VI material, with a third forbidden energy zone, which is wider than either of the first or second forbidden energy zones over at least the interface between the first and second regions, whereby at least the pn tar layer is below the epitaxial layer with wider forbidden zone.
    [28]
    A method according to claim 27, characterized in that the first and second regions each consist of Hg ^ ^ jCd ^ Te, and wherein the step to grow an epitaxial layer is accomplished by an epitaxial layer consisting of GdTe to grow.
    [29]
    Method according to claim 27, characterized in that the first and second regions each consist of Hg ^^^ Cd ^ Te and wherein the step to grow an epitaxial layer is effected by an epitaxial layer consisting of Cd ^^ ZiyDe, grow it.
    [30]
    A method according to claim 27, characterized in that the first and second regions each consist of Hg ^^^ Cd ^ Te, and wherein the step to grow an epitaxial layer is effected by an epitaxial layer consisting of Hg ^^ Od ^ Tte, where x has a value greater than the value of x in the underlying first and second regions.
    [31]
    A method according to claim 29, characterized in that y has a value of about 0.4.
    [32]
    32. Process according to claim 27, characterized in that the step of growing an epitaxial layer is performed such that the epitaxial layer has a thickness of about 5000 A.E.
    [33]
    33. A process according to claim 27, characterized in that an upper surface of the epitaxial layer is doped with a desired dopant to a given ion center.
    [34]
    34. A method according to claim 33, characterized in that the concentration given is approximately 10 atmospheres / cm.
    [35]
    A method of limiting the outward diffusion of mercury from a surface of a structure consisting of HgOdTe Ir radiation absorbing material, characterized in that a structure is provided consisting of HgCdTe material and an epitaxial layer is grown over the surface, where the epitaxial layer contains CdTe.
    [36]
    A method according to claim 35, characterized in that a glass top layer is deposited over the epitaxial layer.
    [37]
    The process according to claim 35, is characterized in that the epitaxial layer is allowed to grow to a thickness of about 5000 A.e.
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    法律状态:
    2001-06-01| A1C| A request for examination has been filed|
    2003-04-01| BN| A decision not to publish the application has become irrevocable|
    优先权:
    申请号 | 申请日 | 专利标题
    US07/174,745|US5936268A|1988-03-29|1988-03-29|Epitaxial passivation of group II-VI infrared photodetectors|
    US17474588|1988-03-29|
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